Dr. (Mrs.) Alka Anil Kumbhar

Dept. Met. Engg. And Materials Sc.,

Indian Institute of Technology, Bombay

Mobile : 9619 430 064,  Tel.  No. 2576 7633

Email : alka04@iitb.ac.in

 

Academic qualifications:  Ph.D. (Physics), University of Pune            

Thesis title : Raman, Optical and electrical studies of amorphous silicon based binary alloy films prepared by plasma and hot-filament assisted chemical vapour deposition techniques.

Ph.D Guide : Dr. S. T. Kshirsagar, Scientist F, National Chemical Laboratory, Pune.

Research Interests

· Thin films of hydrogenated amorphous silicon and its various alloys for their application in opto-electronic and photovoltaic devices.

· HWCVD silicon carbon, silicon nitride and silicon oxide thin films for various application in VLSI

· Low k HSQ films for their application as interlayer dielectric in VLSI

· Synthesis of silicon nanowires by the HWCVD

· Thin film silicon solar cells on flexible substrates and silicon heterojunction solar cells

List of Publications

 

1. Synthesis of silicon nanowires using tin catalyst by hot wire chemical vapor  

 processing

 Meshram, N., Kumbhar, A., Dusane, R.O.

        Materials Research Bulletin, 48 (6) (2013) 2254-2258.   Cited 3 times.

2.  Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition

        Meshram, N.P., Kumbhar, A., Dusane, R.O.

        Thin Solid Films, 519 (14)  (2011)  4609-4612. Cited 7 times.

3.  Designing single chamber HWCVD system for high deposition rate device quality a-   

 Si: H thin films and solar cells

        Wadibhasme, N.A., Soni, S.K., Kumbhar, A., Meshram, N., Dusane, R.O.

        Journal of Nano- and Electronic Physics, 3 (1 PART5), (2011)  942-946.

4. Aluminum-induced in situ crystallization of HWCVD a-Si:H films

       Gupta, S., Chelawat, H., Kumbhar, A.A., Adhikari, S., Dusane, R.O.

       Thin Solid Films, 516 (5) (2008) 850-852. Cited 7 times.

5. Maintaining Cu metal integrity on low-k IMDs with a nn thick a-SiC:H film obtained by HWCVD

       Singh, S.K., Kumbhar, A.A., Dusane, R.O.

       Thin Solid Films, 516 (5)  (2008)  785-788 Cited 1 time.

6. Resisting oxygen plasma damage in low-k hydrogen silsesquioxane films by hydrogen

        plasma treatment

        Singh, S.K., Kumbhar, A.A., Dusane, R.O.

        Materials Letters, 60 (13-14) (2006)  1579-1581  Cited 12 times.

7. Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment

       Singh, S.K., Kumbhar, A.A., Dusane, R.O.

         Materials Science and Engineering B: 127 (1) (2006) 29-33. Cited 8 times.

8. Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment

              Kumbhar, A.A., Singh, S.K., Dusane, R.O.

              Thin Solid Films, 501, (2006) 329-331. Cited 9 times.

9. Hot-wire chemical-vapor-deposited nanometer range a-SiC:H diffusion barrier films for ultralarge-scale-integrated application

        Singh, S.K., Kumbhar, A.A., Dusane, R.O., Bock, W.

        Journal of Vacuum Science and Technology B:   24   (2006)  543-546. Cited 5 times.

10. Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI

       Singh, S.K., Kumbhar, A.A., Kothari, M., Dusane, R.O.     

11.  Further insights into the mechanism of hydrogen-plasma surface passivation of low

dielectric constant hydrogen silsesquioxane (HSQ)

       Singh, S.K., Kumbhar, A.A., Dusane, R.O., Bock, W.

       J. of the Korean Physical Society, 49 (3) (2006) 1312-1316. Cited 3 times.

12. Revisiting the B-factor variation in a-SiC:H deposited by HWCVD

           Swain, B.P., Patil, S.B., Kumbhar, A., Dusane, R.O.

           Thin Solid Films, 430 (1-2),  (2003) 186-188. Cited 20 times.

13. Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD

         Patil, S.B., Kumbhar, A.A., Saraswat, S., Dusane, R.O.

            Thin Solid Films, 430 (1-2) (2003)  257-260. Cited 16 times.

14. Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

Patil, S.B., Vairagar, A.V., Kumbhar, A.A., Sahu, L.K., Ramgopal Rao, V., Venkatramani, N., Dusane, R.O., Schroeder, B.

            Thin Solid Films, 430 (1-2) (2003)  63-66. Cited 8 times.

15. Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-   

        SiN:H films for deep-sub-micron CMOS technologies

        Waghmare, P.C., Patil, S.B., Kumbhar, A.A., Rao, R., Dusane, R.O.

        Thin Solid Films, 430 (1-2) (2003) 189-191. Cited 5 times.

16. Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies

    Waghmare, P.C., Patil, S.B., Kumbhar, A., Dusane, R.O., Rao, V.R.

    Microelectronic Engineering, 61-62  (2002). 625-629. Cited 5 times.

17. Gas phase chemistry study during deposition of a-Si:H and μc-Si:H films by HWCVD using  quadrupole mass spectrometry

            Patil, S.B., Kumbhar, A.A., Dusane, R.O.

           Materials Research Society Symposium - Proceedings, 715 (2002) 171-178.  

18. Reliability issues of ultra thin silicon nitride (a-SiN:H) by hot wire CVD for deep sub-micron CMOS technologies

       Waghmare, P.C., Patil, S.B., Kumbhar, A., Dusane, R.O., Rao, V.R.

       Proceedings of SPIE - The International Society for Optical Engineering, 4746 II,     

       (2002) 1418-1420.  

19. Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene

      Kumbhar, A., Patil, S.B., Kumar, S., Lal, R., Dusane, R.O.

       Thin Solid Films, 395 (1-2) (2001) 244-248. Cited 32 times.

20. Low temperature silicon nitride deposited by Cat-CVD for deep submicron metal-oxide- semiconductor devices

          Patil, S.B., Kumbhar, A., Waghmare, P., Ramgopal Rao, V., Dusane, R.O

          Thin Solid Films, 395 (1-2) (2001)  270-274. Cited 19 times.

21. Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies

      Patil, Samadhan B., Vaidya, Sangeeta, Kumbhar, Alka, Dusane, R.O., Chandorkar,     

     A.N., Rao, V.Ramgopal

      Proceedings of SPIE - The International Society for Optical Engineering, 3975, (2000)

22. Micro-crystalline phase formation in hot wire deposited Si:C:H alloy films from pure methane and silane mixtures

         Kumbhar, A.A., Dusane, R.O., Bauer, S., Schröder, B.

         Journal of Non-Crystalline Solids, 227-230 (PART 1) (1998)  452-455. Cited 15  

         times.

 

 Awards

 

· Research Associateship from CSIR, New Delhi, India, at IIT Bombay, Mumbai, 1996-  

 2001.

·  DST Young Scientist – Fast Track Project under DST SERC Scheme  2001-Feb. 2004.

·  DST Young Scientist – Second Fast Track Project under DST SERC Scheme,  (May 2007  

      to April 2010).