Assistant Professor: Nov 2021 – Present

Email: muneshwar@iitb.ac.in

Tel (Office): +91-22-25767640

Google Scholar Profile: https://scholar.google.co.in/citations?user=vryvM14AAAAJ

ORCID: 0000-0001-7853-0544

Academic Background:

•Ph.D in Materials Engineering, Department of Chemical and Materials Engineering, University of Alberta, Canada, 2014

•Dual Degree (B.Tech and M.Tech), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, 2009

Positions held:

•Post doctoral research fellow, Department of Chemical and Materials Engineering, University of Alberta, Canada, 2015 –  2020

•Research Associate, Department of Chemical and Materials Engineering, University of Alberta, Canada, 2020 –  2021

Research Interests:

•Materials for semiconductor logic/memory device applications

•Modeling of vacuum thin film deposition processes

•Atomic layer deposition (ALD) processes for oxides, nitrides and metal depositions

•Atomic layer etching (ALE) of metals

•Lab-to-Fab ALD/ALE process solutions

Selected Publications:

•T. Muneshwar, K. Cadien, Stoichiometry controlled homogenous ternary oxide growth in showerhead atomic layer deposition reactor and application forZrxHf1-xO2, J. Vac. Sci. Technol. A. 39 (2021) 030401.

•T. Muneshwar, K. Cadien, Resolving self-limiting growth in silicon nitride plasma enhanced atomic layer deposition with tris-dimethylamino silane precursor, J. Vac. Sci. Technol. A. 38 (2020) 062406.

•T. Muneshwar, K. Caiden – Method to improve precursor utilization in pulsed atomic layer processes, US Patent 10,619,243, 2020.

•T. Muneshwar, D. Barlage, K. Cadien, Homogeneous distribution of dopants in ALD films: Tin doped Zinc oxide (ZTO) case study, ALD/ALE 2019 conference, Bellevue, WA.

•T. Muneshwar, D. Barlage, K. Cadien, Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization, J. Vac. Sci. Technol. A. 37 (2019) 030601.

•T. Muneshwar, G. Shoute, D. Barlage and K. Cadien, "Parasitic Surface Reactions in High-Aspect Ratio Via Filling using ALD: A Stochastic Kinetic Model," 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2018, pp. 40.2.1-40.2.4.

•T. Muneshwar, K. Cadien, Surface Reaction Kinetics in atomic layer deposition: An analytical model and experiments, J. Appl. Phys. 124 (2018) 095302. (Editors Pick)

•T. Muneshwar, G. Shoute, D. Barlage, K. Cadien, “Nucleation and Growth mode in ALD: an Atomistic Model”, ASD 2018 conference, Raleigh, NC. USA, 2018.

•T. Muneshwar, K. Cadien, Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation, App. Surf. Sci. 435, (2018) 367-376.

•T. Muneshwar, G. Shoute, D. Barlage, K. Cadien, Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition, J. Vac. Sci. Technol. A. 34 (2016) 050605.

•T. Muneshwar, K. Cadien, AxBAxB… pulsed atomic layer deposition: Numerical growth model and experiments, J. Appl. Phys. 119 (2016) 085306. (Featured Article)

•T. Muneshwar, K. Cadien, Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth, J. Vac. Sci. Technol. A. 33 (2015) 060603.

•T. Muneshwar, K. Cadien, Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma, J. Vac. Sci. Technol. A. 33 (2015) 031502.

•T. Muneshwar, K. Cadien, probing initial-stages of ALD growth with dynamic in-situ spectroscopic ellipsometry, App. Surf. Sci. 328, (2015) 344-348.