Hot wire chemical vapour deposition (HWCVD) of boron carbide thin films from ortho-carborane for neutron detection application
Chaudhari, P., Meshram, N., Singh, A., Topkar, A., Dusane, R.
Thin Solid Films, 519, (2011)  4561-4564.

In situ particle generation and splat formation during solution precursor plasma spraying of yttria-stabilized zirconia coatings
Govindarajan, S., Dusane, R.O., Joshi, S.V.
Journal of the American Ceramic Society, 94 (2011)  4191-4199.

Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition
Meshram, N.P., Kumbhar, A., Dusane, R.O.
Thin Solid Films, 519 (14)  (2011)  4609-4612.

Opportunities for new materials synthesis by hot wire chemical vapor process
Dusane, R.O.
Thin Solid Films, 519 (14)  (2011)  4555-4560

Effective passivation of c-Si by intrinsic a-Si:H layer for HIT solar cells
More, S., Dusane, R.O.
Journal of Nano- and Electronic Physics, 3 (1 PART5),  (2011) 1120-1126.

Effect of number of filaments on the structure, composition and electrical properties of μC-Si: H layers deposited using HWCVD technique
Soni, S.K., Dusane, R.O.
Journal of Nano- and Electronic Physics, 3 (1 PART3), (2011)  551-557.

Designing single chamber HWCVD system for high deposition rate device quality a-Si: H thin films and solar cells
Wadibhasme, N.A., Soni, S.K., Kumbhar, A., Meshram, N., Dusane, R.O.
Journal of Nano- and Electronic Physics, 3 (1 PART5), (2011)  942-946.

Hot wire chemical vapor deposited boron carbide thin film/c-silicon diode for neutron detection application
Chaudhari, P., Singh, A., Topkar, A., Dusane, R.
International Semiconductor Device Research Symposium, ISDRS(2011). 6135377

Process engineering to avoid epitaxy at a-Si:H/c-Si interface for heterojunction silicon solar cells 
More, S.,  Chaudhari, P. ,  Dusane, R.O. 
International Semiconductor Device Research Symposium, ISDRS (2011) 6135324