Segregation of in to dislocations in InGaN
Horton, M.K. ,  Rhode, S.,  Sahonta, S.-L.,  Kappers, M.J.,  Haigh, S.J.,  Pennycook, T.J.,  Humphreys, C.J.,  Dusane, R.O.,  Moram, M.A. 
Nano Letters, 15 (2), (2015) 923-930. Cited 3 times.

Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter
Chaudhari, P. ,  Singh, A. ,  Topkar, A. ,  Dusane, R.  
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 779 (2015)  33-38

Effect of SPPS Process Parameters on In-Flight Particle Generation and Splat Formation to Achieve Pure α-Al2O3 Coatings
Sivakumar, G. ,  Ramakrishna, M.,  Dusane, R.O.,  Joshi, S.V. 
Journal of Thermal Spray Technology, 24(7) (2015) 1221-1234

Passivation study of multi-crystalline silicon wafer with i-a-Si:H layer deposited by HWCVD
Agarwal, M.,  Dusane, R.O.  
Thin Solid Films, 575 (2015) 64-66

Temperature dependent analysis of heterojunction silicon solar cells: Role of intrinsic layer thickness
Mohit Agarwal and Rajiv O. Dusane
IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Dislocation core structures in Si-doped GaN
Rhode, S. L.,  Horton, M.K.,  Fu, W.Y.,  Sahonta, S.-L.,  Kappers, M.J.,  Pennycook,  T.J.,  Humphreys, C.J.,  Dusane, R.O.,  Moram, M.A
Applied Physics Letters, 107  (2015) 243104 (1-5)