Development of low temperature RF magnetron sputtered ITO films on flexible substrate
Muneshwar, T.P., Varma, V., Meshram, N., Soni, S., Dusane, R.O.
Solar Energy Materials and Solar Cells, 94, (2010) 1448-1450.
Development of low temperature RF magnetron sputtered ITO films on flexible substrate
Muneshwar, T.P., Varma, V., Meshram, N., Soni, S., Dusane, R.O.
Solar Energy Materials and Solar Cells, 94, (2010) 1448-1450.
High deposition rate device quality a-Si:H films at low substrate temperature by HWCVD technique
Soni, S.K., Phatak, A., Dusane, R.O.
Solar Energy Materials and Solar Cells, 94 (9) (2010) 1512-1515.
Aluminum-induced in situ crystallization of HWCVD a-Si:H films
Gupta, S., Chelawat, H., Kumbhar, A.A., Adhikari, S., Dusane, R.O.
Thin Solid Films, 516 (5) (2008) 850-852.
Hot wire chemical vapor processing (HWCVP) - A prospective tool for VLSI
Dusane, R.O.
Thin Solid Films, 516 (5) (2008) 779-784.
Maintaining Cu metal integrity on low-k IMDs with a nn thick a-SiC:H film obtained by HWCVD
Singh, S.K., Kumbhar, A.A., Dusane, R.O.
Thin Solid Films, 516 (5) (2008) 785-788
Tribologicalbehaviour and residual stress of electrodeposited Ni/Cu multilayer films on stainless steel substrate
Ghosh, S.K. Limaye, P.K.Swain, B.P., Soni, N.L., Agrawal, R.G., Dusane, R.O. Grover, A.K.
Surface and Coatings Technology, 201 (8) (2007) 4609-4618.
Effect of substrate temperature on HWCVD deposited a-SiC:H film
Swain, B.P., Dusane, R.O.
Materials Letters, 61 (25) (2007) 4731-4734.
Improved pitting corrosion behaviour of electrodeposited nanocrystalline Ni-Cu alloys in 3.0 wt.%NaCl solution
Ghosh, S.K., Dey, G.K., Dusane, R.O., Grover, A.K.
Journal of Alloys and Compounds, 426 (1-2) (2006) 235-243.
High magnetoresistance and low coercivity in electrodeposited Co/Cu granular multilayers
Ghosh, S.K., Grover, A.K., Chowdhury, P., Gupta, S.K., Ravikumar, G., Aswal, D.K., Kumar, M.S., Dusane, R.O.
Applied Physics Letters, 89 (13), (2006) 132507
Multiphase structure of hydrogen diluted a-SiC:H deposited by HWCVD
Swain, B.P., Dusane, R.O.
Materials Chemistry and Physics, 99 (2-3) (2006) 240-246
Resisting oxygen plasma damage in low-k hydrogen silsesquioxane films by hydrogen plasma treatment
Singh, S.K., Kumbhar, A.A., Dusane, R.O.
Materials Letters, 60 (13-14) (2006) 1579-1581
Effect of H2 dilution on Cat-CVD a-SiC:H films
Swain, B.P., Rao, T.K.G., Roy, M., Gupta, J., Dusane, R.O.
Thin Solid Films, 501 (1-2) (2006) 173-176.
Structural characterization of electrodeposited nanophase Ni-Cu alloys
Ghosh, S.K., Grover, A.K., Dey, G.K., Kulkarni, U.D., Dusane, R.O., Suri, A.K., Banerjee, S.
Journal of Materials Research, 21 (1 ) (2006) 45-61.
Effect of filament temperature on HWCVD deposited a-SiC : H
Swain, B.P., Dusane, R.O.
Materials Letters, 60 (24) (2006) 2915-2919.
Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment
Singh, S.K., Kumbhar, A.A., Dusane, R.O.
Materials Science and Engineering B: 127 (1) (2006) 29-33.
Microcrystalline single and double junction silicon based solar cells entirely prepared by HWCVD on textured zinc oxide substrate
Kumar, P., Kupich, M., Bock, W., Dusane, R.O., Schroeder, B.
Journal of Non-Crystalline Solids, 352, (2006) 1855-1858.
Internal stress in Cat-CVD microcrystalline Si:H thin films
Sahu, L., Kale, N., Kulkarni, N., Pinto, R., Dusane, R.O., Schröder, B.
Thin Solid Films, 501, (2006) 117-120.
Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment
Kumbhar, A.A., Singh, S.K., Dusane, R.O.
Thin Solid Films, 501, (2006) 329-331.
One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D
Tripathi, S., Venkataramani, N., Dusane, R.O., Schroeder, B.
Thin Solid Films, 501 (1-2) (2006) 295-298..
Microscopic properties of H2 diluted HWCVD deposited a-SiC:H film
Swain, B.P., Dusane, R.O.
Microelectronic Engineering, 83 (1 SPEC. ISS.) (2006) 55-57
Hot-wire chemical-vapor-deposited nanometer range a-SiC:H diffusion barrier films for ultralarge-scale-integrated application
Singh, S.K., Kumbhar, A.A., Dusane, R.O., Bock, W.
Journal of Vacuum Science and Technology B: 24 (2006) 543-546.
Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI
Singh, S.K., Kumbhar, A.A., Kothari, M., Dusane, R.O.
Thin Solid Films, 501 (1-2), (2006) 318-321.
Further insights into the mechanism of hydrogen-plasma surface passivation of low dielectric constant hydrogen silsesquioxane (HSQ)
Singh, S.K., Kumbhar, A.A., Dusane, R.O., Bock, W.
Journal of the Korean Physical Society, 49 (3) (2006) 1312-1316.
AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films
Tripathi, S., Dusane, R.O.
Journal of Non-Crystalline Solids, 352 (9-20 SPEC.ISS.)(2006) 1105-1108
Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD
Swain, B.P., GunduRao, T.K., Dusane, R.O.
Journal of Non-Crystalline Solids, 352(2006) 1416-1420
Thermodynamic analysis of gas phase chemistry in hot wire chemical vapor deposition of a-Si:H and μc-Si:H
Adhikari, S., Viswanathan, N.N., Dusane, R.O.
Journal of Non-Crystalline Solids, 352 (2006) 928-932.
Non-plasma-based technologies to augment backend processing in future ULSI
Dusane, R.O.
Journal of the Korean Physical Society, 49 (3) (2006) 1281-1286.
Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films
Joshi, M., Singh, S., Swain, B., Patil, S., Dusane, R., Rao, R., Mukherji, S.
Proceedings of the IEEE INDICON 2004 - 1st India Annual Conference, 538-541.
Revisiting the B-factor variation in a-SiC:H deposited by HWCVD
Swain, B.P., Patil, S.B., Kumbhar, A., Dusane, R.O.
Thin Solid Films, 430 (1-2), (2003) 186-188.
Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD
Patil, S.B., Kumbhar, A.A., Saraswat, S., Dusane, R.O.
Thin Solid Films, 430 (1-2) (2003) 257-260.
Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices
Patil, S.B., Vairagar, A.V., Kumbhar, A.A., Sahu, L.K., Ramgopal Rao, V., Venkatramani, N., Dusane, R.O., Schroeder, B.
Thin Solid Films, 430 (1-2) (2003) 63-66.
Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-
SiN:H films for deep-sub-micron CMOS technologies
Waghmare, P.C., Patil, S.B., Kumbhar, A.A., Rao, R., Dusane, R.O. Thin Solid Films, 430 (1-2) (2003) 189-191.
Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies
Waghmare, P.C., Patil, S.B., Kumbhar, A., Dusane, R.O., Rao, V.R.
Microelectronic Engineering, 61-62 (2002). 625-629.
Improvement in gate dielectric quality of ultra thin a: SiN:H MNS capacitor by hydrogen etching of the substrate
Waghmare, P.C., Patil, S.B., Dusane, R.O., Ramgopal Rao, V.
Materials Research Society Symposium - Proceedings, 716, (2002) 171-176.
Electrically induced junction MOSFET for high performance sub-50nm CMOS technology
Dixit, A., Dusane, R.O., Ramgopal Rao, V.
Materials Research Society Symposium - Proceedings, 716, (2002) 305-310.
Gas phase chemistry study during deposition of a-Si:H and μc-Si:H films by HWCVD using quadrupole mass spectrometry
Patil, S.B., Kumbhar, A.A., Dusane, R.O.
Materials Research Society Symposium - Proceedings, 715 (2002) 171-178.
Reliability issues of ultra thin silicon nitride (a-SiN:H) by hot wire CVD for deep sub-micron CMOS technologies
Waghmare, P.C., Patil, S.B., Kumbhar, A., Dusane, R.O., Rao, V.R.
Proceedings of SPIE - The International Society for Optical Engineering, 4746 II, (2002) 1418-1420.
Suppression of boron penetration by hot wire CVD polysilicon
Vairagar, A.V., Patil, S.B.,Pete, D.J.,Waghmare, P.C.,Dusane, R.O.,Venkatramani, N.,Ramgopal Rao, V.
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2002, 223-226.
Photoluminescent, wide-bandgapa-SiC:H alloy films deposited by Cat-CVD using acetylene
Kumbhar, A., Patil, S.B., Kumar, S., Lal, R., Dusane, R.O.
Thin Solid Films, 395 (1-2) (2001) 244-248.
Low temperature silicon nitride deposited by Cat-CVD for deep submicron metal-oxide- semiconductor devices
Patil, S.B., Kumbhar, A., Waghmare, P., RamgopalRao, V., Dusane, R.O
Thin Solid Films, 395 (1-2) (2001) 270-274.
Influence of atomic hydrogen on the growth kinetics of a-Si:H films and on the properties of silicon substrates
Seitz, H., Bauer, S., Dusane, R.O., Schröder, B.
Thin Solid Films, 395 (1-2), (2001) 116-120
Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVD
Dusane, R.O., Diehl, F., Weber, U., Schröder, B.
Thin Solid Films, 395 (1-2) (2001) 202-205
Is the nucleation and coalescence behavior in the growth of a-Si:H films prepared by the CAT-CVD different?
Dusane, R.O., Bauer, S., Schröder, B., Oechsner, H.
Thin Solid Films, 395 (1-2) (2001) 121-124.
p-type window layers for pin solar cells entirely fabricated by Hot-Wire CVD
Weber, U., Koob, M., Mukherjee, C., Chandrashekhar, D., Dusane, R.O.,
Schroeder, B.
Materials Research Society Symposium Proceedings, 664 (2001) A361-A366
Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies
Patil, Samadhan B., Vaidya, Sangeeta, Kumbhar, Alka, Dusane, R.O., Chandorkar, A.N., Rao, V.Ramgopal
Proceedings of SPIE - The International Society for Optical Engineering, 3975, (2000)
Micro-crystalline phase formation in hot wire deposited Si:C:H alloy films from pure
methane and silane mixtures
Kumbhar, A.A., Dusane, R.O., Bauer, S., Schröder, B.
Journal of Non-Crystalline Solids, 227-230 (PART 1) (1998) 452-455.
p-i Interface engineering and i-layer control of hot-wire a-Si:H based p-i-n solar cells using -situ ellipsometry
Bauer, S., Dusane, R.O., Herbst, W., Diehl, F., Schröder, B., Oechsner, H.
Solar Energy Materials and Solar Cells, 43 (4) (1996) 413-424.
In situ ellipsometric studies of the growth of a-Si:H films prepared by the hot wire deposition
Bauer, S., Dusane, R.O., Biehl, R., Schroeder, B., Oechsner, H.
Materials Research Society Symposium Proceedings, 420, (1996) 425-430.
Field electron emission from hydrogenated amorphous silicon films on tungsten: Light- induced effects
Joag, D.S., Sharma, A.K., More, M.A., Dusane, R.O., Takwale, M.G.
Applied Physics Letters, 64 (25), (1994) 3437-3439.
Structural defects in glow discharge a-Si:C:H investigated by positron annihilation spectroscopy
Dusane, R.O.,Rajarshi, S.V., Goyal, D.J., Bhide, V.G., Nagrajan, T.
Journal of Applied Physics, 76 (1) (1994) 242-245.
Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition method
Dusane, R.O., Dusane, S.R., Bhide, V.G., Kshirsagar, S.T.
Applied Physics Letters, 63 (16) (1993) 2201-2203.
Ion beam induced structural transformations in hydrogenated mc- silicon
S.N.Yedave, S.B.Ogale, R.O. Dusane, S.V. Rajarshi, V.G.Bhide and S. T. Kshirsagar
J. Appl. Phys.71(8), (1992), 3773-3779.
Properties of a-Si:C:H alloys deposited in the hot plasma box glow discharge reactor
D.M.Bhusari, R.O. Dusane, S.T.Kshirsagar
J.Non.Cryst. Solids, 137&138, (1991), 689-692.
Effect of local structural order on the doping in hydrogenated amorphous silicon
R.O. Dusane, S.R.Dusane, V.G.Bhide, S.T.Kshirsagar
J. Non. Cryst.Solids, 137&138, (1991), 115-118.
Dependence of Effective Doping on Structural Order in Hydrogenated Amorphous Silicon
R.O. Dusane, SuvarnaBabras, S.R.Jadkar and V.G.Bhide
Solid State Communication, 77, (1991), 195-197.
Effect of RF Power on the structure and related gap states in hydrogenated amorphous silicon
S. Babras, S. V. Rajarshi, R.O. Dusane and V. G. Bhide
J. Non. Cryst.Solids, 119, (1990), 342-346. Cited 7 times.
Photovoltaic, I-V and C-V Characteristics of SnO2/SiO2/a-Si:H/mc-Si:H Structures
M.Faraji, SuvarnaBabras, S.Mirzapour, C.Agashe, S.Rajarshi, R.O. Dusane and S.V.Ghaisas
Jap. J. Appl. Phys. 29, (1990), L 2080-2081.
Nature of the disordered state of hydrogenated amorphous silicon as revealed by the study of anelastic relaxation behavior
RamLal, A.V.Kulkarni, R.O. Dusane, V.G.Bhide and S.B.Ogale
J. Mater. Res. 4, (1989), 612-615.
Dopant atom induced disorder in hydrogenated amorphous silicon: Raman studies
S.T.Kshirsagar, R.O.Dusane and V.G.Bhide
Phys.Rev. B40, (1989), 8026-8029.
Systematic study of the process parameters affecting hydrogen plasma passivation of polycrystalline silicon and polycrystalline solar cells
V.M.Arole, R.O. Dusane, M.G.Takwale, B.R.Marathe and V.G.Bhide
Solar Energy Mater.7, (1988), 391-405.
Raman scattering studies of ion beam inducedmixing at the amorphous germanium / crystalline silicon interface
S.T.Kshirsagar, S.V.Rajarshi, R.O. Dusane, J.Vaidya and V.G.Bhide
Appl .Phys. Lett. 51, (1987), 2019-2021.